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Controlling the orientation of terraced nanoscale 'ribbons' of a poly(thiophene) semiconductor

机译:控制聚噻吩半导体的梯形纳米级“带”的取向

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摘要

The large-scale manufacture of organic electronics devices becomes more feasible if the molecular orientation and morphology of the semiconductor can be controlled. Here, we report on a previously unidentified crystal shape of terraced nanoscale "ribbons" in thin films of poly(2,5-bis(3- alkylthiophen-2-yl)thieno[3,2-b]thiophene) (pBTTT). The ribbons form after a pBTTT film is heated above its highest temperature phase transition. In contrast to the wide terrace crystal shape previously reported, terraced ribbons have lateral widths of =60 nm and lengths greater than 10 |xm, with a common orientation between adjacent ribbons. Further, we report a simple and scalable flow coating process that can control the ribbon orientation without requiring special substrates or external fields. The degree of molecular orientation is small after coating but increases dramatically after the terraced ribbons are formed, indicating that an oriented minority templates the whole film structure. The large extent of orientation obtained in these polythiophene crystallites provides potential opportunities to exploit anisotropic electrical properties and to obtain detailed information about the structure of organic semiconductor thin films.
机译:如果可以控制半导体的分子取向和形态,则有机电子器件的大规模生产将变得更加可行。在这里,我们报道了聚(2,5-双(3-烷基噻吩-2-基)噻吩并[3,2-b]噻吩)(pBTTT)薄膜中梯形纳米级“带”的先前未知的晶体形状。在将pBTTT薄膜加热到其最高温度相变以上之后,形成带状物。与先前报道的宽梯形晶体形状相反,梯形带的横向宽度= 60 nm,长度大于10 | m,相邻带之间的取向相同。此外,我们报告了一种简单且可扩展的流涂工艺,该工艺可以控制碳带方向,而无需特殊的基材或外部场。涂布后分子取向度很小,但在梯形带形成后分子取向度急剧增加,表明取向的少数会模板化整个膜结构。在这些聚噻吩微晶中获得的大量取向提供了利用各向异性电学性质并获得有关有机半导体薄膜结构的详细信息的潜在机会。

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