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Au/Ag bilayered metal mesh as a Si etching catalyst for controlled fabrication of Si nanowires

机译:Au / Ag双层金属网作为Si蚀刻催化剂,可控制制造Si纳米线

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摘要

Au/Ag bilayered metal mesh with arrays of nanoholes were devised as a catalyst for metal-assisted chemical etching of silicon. The present metal catalyst allows us not only to overcome drawbacks involved in conventional Ag-based etching processes, but also to fabricate extended arrays of silicon nanowires (SiNWs) with controlled dimension and density. We demonstrate that SiNWs with different morphologies and axial orientations can be prepared from silicon wafers of a given orientation by controlling the etching conditions. We explored a phenomenological model that explains the evolution of the morphology and axial crystal orientation of SiNWs within the framework of the reaction kinetics.
机译:具有纳米孔阵列的Au / Ag双层金属网被设计为金属辅助化学刻蚀硅的催化剂。本金属催化剂不仅使我们能够克服传统的基于银的蚀刻工艺中的缺陷,而且使我们能够制造尺寸和密度可控的硅纳米线(SiNW)扩展阵列。我们证明了可以通过控制刻蚀条件,从给定方向的硅晶片制备出具有不同形态和轴向取向的SiNW。我们探索了一种现象学模型,该模型解释了SiNWs的形态和轴向晶体取向在反应动力学框架内的演变。

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