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Graphene oxide as a monoatomic blocking layer

机译:氧化石墨烯作为单原子阻挡层

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Monolayer graphene oxide (mGO) is shown to effectively protect molecular thin films from reorganization and function as an atomically thin barrier for vapor-deposited Ti/Al metal top electrodes. Fragile organic Langmuir-Blodgett (LB) films of C _(22) fatty acid cadmium salts (cadmium(II) behenate) were covered by a compressed mosaic LB film of mGO flakes. These hybrid LB films were examined with atomic force microscopy (AFM) and X-ray reflectivity, both with and without the metal top electrodes. While the AFM enabled surface and morphology analysis, the X-ray reflectivity allowed for a detailed structural depth profiling of the organic film and mGO layer below the metal top layers. The structure of the mGO-protected LB films was found to be perfectly preserved; in contrast, it has previously been shown that metal deposition completely destroys the first two LB layers of unprotected films. This study provides clear evidence of the efficient protection offered by a single atomic layer of GO.
机译:已显示单层氧化石墨烯(mGO)可有效保护分子薄膜免受重组,并充当气相沉积的Ti / Al金属顶部电极的原子薄势垒。 C_(22)脂肪酸镉盐(山be酸镉(II))的易碎有机Langmuir-Blodgett(LB)膜被mGO薄片的压缩镶嵌LB膜覆盖。这些杂化的LB膜在有金属顶电极和没有金属顶电极的情况下都用原子力显微镜(AFM)和X射线反射率进行了检查。虽然AFM可以进行表面和形态分析,但X射线反射率可以对有机顶层和金属顶层下方的mGO层进行详细的结构深度剖析。发现mGO保护的LB膜的结构被完美保留;相反,以前已经证明金属沉积完全破坏了未保护膜的前两个LB层。这项研究为GO的单个原子层提供了有效的保护提供了明确的证据。

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