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Reversible formation of ammonium persulfate/sulfuric acid graphite intercalation compounds and their peculiar Raman spectra

机译:过硫酸铵/硫酸石墨插层化合物的可逆形成及其独特的拉曼光谱

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摘要

Graphite intercalation compounds (GICs) can be considered stacks of individual doped graphene layers. Here we demonstrate a reversible formation of sulfuric acid-based GICs using ammonium persulfate as the chemical oxidizing agent. No covalent chemical oxidation leading to the formation of graphite oxide occurs, which inevitably happens when other compounds such as potassium permanganate are used to charge carbon layers. The resulting acid/persulfate-induced stage-1 and stage-2 GICs are characterized by suppression of the 2D band in the Raman spectra and by unusually strong enhancement of the G band. The G band is selectively enhanced at different doping levels with different excitations. These observations are in line with recent reports for chemically doped and gate-modulated graphene and support newly proposed theories of Raman processes. At the same time GICs have some advantageous differences over graphene, which are demonstrated in this report. Our experimental observations, along with earlier reported data, suggest that at high doping levels the G band cannot be used as the reference peak for normalizing Raman spectra, which is a commonly used practice today. A Fermi energy shift of 1.20-1.25 eV and ~1.0 eV was estimated for the stage-1 and stage-2 GICs, respectively, from the Raman and optical spectroscopy data.
机译:可以将石墨插层化合物(GIC)视为单个掺杂石墨烯层的堆叠。在这里,我们证明了使用过硫酸铵作为化学氧化剂可逆地形成基于硫酸的GIC。没有发生导致形成氧化石墨的共价化学氧化,这在使用其他化合物(如高锰酸钾)充电碳层时不可避免地发生。所得的酸/过硫酸盐诱导的1期和2期GIC具有拉曼光谱中2D谱带的抑制和G谱带异常强的增强的特征。在不同的掺杂水平和不同的激发下,G带被选择性地增强。这些观察结果与化学掺杂和门调制石墨烯的最新报道相符,并支持了拉曼工艺的新提出的理论。同时,GIC与石墨烯相比具有一些有利的差异,这一点在本报告中得到了证明。我们的实验观察以及早期报道的数据表明,在高掺杂水平下,G带不能用作归一化拉曼光谱的参考峰,这是当今普遍使用的做法。根据拉曼光谱和光谱数据,第一阶段和第二阶段GIC的费米能级位移分别为1.20-1.25 eV和〜1.0 eV。

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