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Domain (Grain) boundaries and evidence of 'twinlike' structures in chemically vapor deposited grown graphene

机译:化学气相沉积生长的石墨烯中的域(晶粒)边界和“双峰”结构的证据

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摘要

Understanding and engineering the domain boundaries in chemically vapor deposited monolayer graphene will be critical for improving its properties. In this study, a combination of transmission electron microscopy (TEM) techniques including selected area electron diffraction, high resolution transmission electron microscopy (HR-TEM), and dark field (DF) TEM was used to study the boundary orientation angle distribution and the nature of the carbon bonds at the domain boundaries. This report provides an important first step toward a fundamental understanding of these domain boundaries. The results show that, for the graphene grown in this study, the 46 measured misorientation angles are all between 11° and 30° (with the exception of one at 7°). HR-TEM images show the presence of adsorbates in almost all of the boundary areas. When a boundary was imaged, defects were seen (dangling bonds) at the boundaries that likely contribute to adsorbates binding at these boundaries. DF-TEM images also showed the presence of a "twinlike" boundary.
机译:了解和设计化学气相沉积单层石墨烯中的域边界对于改善其性能至关重要。在这项研究中,结合使用了透射电子显微镜(TEM)技术,包括选择区域电子衍射,高分辨率透射电子显微镜(HR-TEM)和暗场(DF)TEM,以研究边界取向角分布和性质在域边界的碳键。该报告为迈向对这些域边界的基本了解提供了重要的第一步。结果表明,对于本研究中生长的石墨烯,测得的46个取向差角均在11°至30°之间(一个7°处除外)。 HR-TEM图像显示几乎所有边界区域都存在吸附物。当边界成像时,在边界处发现缺陷(悬挂键),这可能有助于吸附物在这些边界处结合。 DF-TEM图像还显示出“双胞胎”边界的存在。

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