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Ultrahigh density alignment of carbon nanotube arrays by dielectrophoresis

机译:介电电泳法对碳纳米管阵列的超高密度对准

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We report ultrahigh density assembly of aligned single-walled carbon nanotube (SWNT) two-dimensional arrays via AC dielectrophoresis using high-quality surfactant-free and stable SWNT solutions. After optimization of frequency and trapping time, we can reproducibly control the linear density of the SWNT between prefabricated electrodes from 0.5 SWNT/μm to more than 30 SWNT/μm by tuning the concentration of the nanotubes in the solution. Our maximum density of 30 SWNT/μm is the highest for aligned arrays via any solution processing technique reported so far. Further increase of SWNT concentration results in a dense array with multiple layers. We discuss how the orientation and density of the nanotubes vary with concentrations and channel lengths. Electrical measurement data show that the densely packed aligned arrays have low sheet resistances. Selective removal of metallic SWNTs via controlled electrical breakdown produced field-effect transistors with high current on-off ratio. Ultrahigh density alignment reported here will have important implications in fabricating high-quality devices for digital and analog electronics.
机译:我们报告使用高品质的无表面活性剂和稳定的SWNT解决方案通过交流电介电泳的对齐的单壁碳纳米管(SWNT)二维阵列的超高密度组装。经过优化频率和捕获时间后,我们可以通过调节溶液中纳米管的浓度,将预制电极之间的SWNT的线密度可重现地控制在0.5 SWNT /μm至30 SWNT /μm以上。通过迄今为止报道的任何溶液处理技术,我们的最大密度为30 SWNT /μm,是对齐阵列的最高密度。 SWNT浓度的进一步增加导致具有多层的密集阵列。我们讨论了纳米管的方向和密度如何随浓度和通道长度而变化。电学测量数据表明,密集排列的阵列具有较低的薄层电阻。通过控制电击穿选择性去除金属单壁碳纳米管,可制得具有高电流开关比的场效应晶体管。本文报道的超高密度对准将对制造用于数字和模拟电子产品的高质量器件具有重要意义。

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