Two-Dimensional Molybdenum Tungsten Diselenide Alloys: Photoluminescence, Raman Scattering, and Electrical Transport

摘要

Two-dimensional transition-metal dichalcogenide alloys have attracted intense attention due to their tunable band gaps. In the present work, photoluminescence, Raman scattering, and electrical transport properties of monolayer and few-layer molybdenum tungsten diselenide alloys (Mo_(1-x)W_xSe_2, 0 ≤ x ≤ 1) are systematically investigated. The strong photoluminescence emissions from Mo_(1-x)W_xSe_2 monolayers indicate composition-tunable direct band gaps (from 1.56 to 1.65 eV), while weak and broad emissions from the bilayers indicate indirect band gaps. The first-order Raman modes are assigned by polarized Raman spectroscopy. Second-order Raman modes are assigned according to its frequencies. As composition changes in Mo_(1-x)W_xSe_2 monolayers and few layers, the out-of-plane A_(1g) mode showed one-mode behavior, while B_(2g)~1 (only observed in few layers), in-plane E_(2g)~1, and all observed second-order Raman modes showed two-mode behaviors. Electrical transport measurement revealed n-type semiconducting transport behavior with a high on/off ratio (>10~5) for Mo_(1-x)W_xSe_2 monolayers.