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首页> 外文期刊>RSC Advances >Critical insights into understanding the effects of synthesis temperature and nitrogen doping towards charge storage capability and microwave shielding in nitrogen-doped carbon nanotube/polymer nanocomposites
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Critical insights into understanding the effects of synthesis temperature and nitrogen doping towards charge storage capability and microwave shielding in nitrogen-doped carbon nanotube/polymer nanocomposites

机译:理解合成温度和氮掺杂朝向氮掺杂碳纳米管/聚合物纳米复合材料的微波屏蔽的关键见解

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摘要

In this study, various nitrogen-doped (N-doped) multiwall carbon nanotubes (MWNTs) were synthesized by varying the synthesis temperature (650 degrees C, 750 degrees C and 850 degrees C), and their charge storage capability and electromagnetic (EM) shielding effectiveness (SE) were assessed by incorporating them into a PVDF (polyvinylidene fluoride) matrix. Nitrogen doping was adopted to generate numerous polarizable centers in MWNTs. The concentration of nitrogen and polarizing centers was optimized by varying the synthesis temperature. The nitrogen doping had a significant impact on the structural, thermal, and electrical properties of MWNTs. Dielectric spectroscopy of the nanocomposites containing self-polarizable MWNTs showed significantly low loss tangent, exhibiting good charge storage ability at a given concentration of MWNTs. The electrical conductivity of N-doped nanocomposites decreased as the synthesis temperature increased from 650 degrees C to 850 degrees C. This phenomenon was observed to be significantly different to the bulk powder. The electrical conductivity of the nanocomposites was also reflected in the EM shielding results where the nanocomposites containing N-doped MWNTs showed lower shielding effectiveness than the un-doped MWNTs. Moreover, the SE decreased with increasing synthesis temperature for N-doped MWNTs. Taken together, this study demonstrates critical insights about the impact of nitrogen doping and synthesis temperature on electrical conductivity, charge storage ability, and EM shielding of MWNT polymer-based nanocomposites.
机译:在该研究中,通过改变合成温度(650℃,750℃和850℃),以及它们的电荷存储能力和电磁(EM)来合成各种氮掺杂(N掺杂的)多壁碳纳米管(MWNT)。通过将它们掺入PVDF(聚偏二氟乙烯)基质中来评估屏蔽效果(SE)。采用氮掺杂在MWNT中产生许多可极化的中心。通过改变合成温度优化氮气和偏振中心的浓度。氮掺杂对MWNT的结构,热和电性能产生显着影响。含有自极化MWNT的纳米复合材料的介电光谱显示出明显低的损失切线,在给定浓度的MWNT下表现出良好的电荷储存能力。当合成温度从650℃升高至850℃时,N掺杂纳米复合材料的导电性降低。观察到这种现象与散装粉末显着不同。纳米复合材料的电导率也反映在EM屏蔽结果中,其中含有N掺杂MWNT的纳米复合材料显示器比未掺杂的MWNT显示较低的屏蔽效果。此外,通过增加N掺杂MWNT的合成温度降低,SE降低。在一起,本研究表明了关于氮掺杂和合成温度对电导率,电荷储存能力和基于MWNT基于聚合物的纳米复合材料的屏蔽的关键洞察。

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