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首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Investigation Investigation of local structural and magnetic properties of discontinuous to continuous layer of Co at Co/MgO interface in MgO/Co/MgO trilayer structure
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Investigation Investigation of local structural and magnetic properties of discontinuous to continuous layer of Co at Co/MgO interface in MgO/Co/MgO trilayer structure

机译:MgO / Co / MgO三层结构中CO / MGO接口连续二架局部结构和磁性局部结构和磁性的研究

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We investigate influence of oxygen migration in MgO/Co/MgO trilayer structure by varying Co and MgO layer thickness. To resolve Co/MgO interface structural and magnetic properties, we used near edge X-ray absorption spectra (XANES), X-ray absorption fine structure (XAFS) spectroscopy and Magneto-optical Kerr effect (MOKE) on MgO/Co/MgO trilayer structure. O K-edge XANES spectra show the variation in hybridization of Co 3d orbitals with neighboring O 2p orbitals as a function of Co layer thickness. Co L-3-edge XANES and Co K-edge XAFS results revealed the quantity of CoO formation as a function of Co layer thickness from discontinuous layer to continuous layer. Formation of cobalt oxide is mainly due to island formation of Co <= 10 nm layer and oxygen migration from MgO layer at interface via redox reaction to form Co-O bonds. The oxygen migration is driven by imperfect stoichiometry of MgO at the Co/MgO interface. The formation of CoO layer influences the Co-O orbital hybridization modifying in-plane magnetic anisotropy as a function of Co and MgO layer thickness. Higher coercivity (Hc) for lower thickness of Co layer confirms the formation of domain wall pinning. A model has been drawn to describe the interaction of Co layer with MgO layer at Co/MgO interface from discontinues to continuous region of Co thin film of magnetic tunnel junctions (MTJ)s, which may help to design high-performance spintronic devices. (C) 2017 Elsevier B.V. All rights reserved.
机译:我们通过不同的CO和MgO层厚度调查MgO / Co / MgO三层结构中氧气迁移的影响。解决CO / MGO接口结构和磁性,我们在边缘X射线吸收光谱(XANES),X射线吸收细结构(XAFS)光谱和MgO / Co / MgO三层器上的磁光kerr效果(搬迁)结构体。 o K-Edge Xanes光谱显示CO 3D轨道与相邻O 2P轨道的杂交的变化作为CO层厚度的函数。 CO L-3-Edge Xanes和Co K-Edge XAFS结果表明,COO形成的数量是从不连续层到连续层的CO层厚度的函数。氧化钴的形成主要是由于通过氧化还原反应在接口的MgO层中形成Co <= 10nm层和氧迁移,形成CO-O键。通过CO / MGO接口的MgO的不完美化学计量驱动氧气迁移。 CoO层的形成对平面内磁各向异性改性的Co-O轨道杂交进行了影响,作为CO和MgO层厚度的函数。较低厚度CO层的较高的矫顽力(HC)确认畴壁钉扎的形成。已经绘制了一种模型,以描述CO层与MgO层在Co / MgO接口中的相互作用从CO / MGO接口中的中断到磁隧道结(MTJ)S的连续区域,这可能有助于设计高性能的闪光装置。 (c)2017年Elsevier B.V.保留所有权利。

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