High quality β-Ga_2O_3 film grown with N_2O for high sensitivity solar-blind-ultraviolet photodetector with fast response speed

摘要

High quality β-Ga_2O_3 film is grown by using N_2O as reaction gas for the fabrication of high performance solar-blind-ultraviolet photodetector. Compared with traditional solar-blind-ultraviolet photodetector based on β-Ga_2O_3 film grown with O_2, the reported solar-blind-ultraviolet photodetector exhibits higher photoresponsivity of 26.1 A/W, larger on/off ratio (I255 nm Kght/Idark) of 104, and faster response speed (a rise time of 0.48 s and a decay time of 0.18 s at 10 V. The high photoresponsivity and fast response speed of the reported β-Ga_2O_3 solar-blind-ultraviolet photodetector can be attributed to the reduction of scattering or/and trapped centre of photo-generated carriers formed in the film grown with N_2O.