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Potential 2D thermoelectric material ATeI (A = Sb and Bi) monolayers from a first-principles study

机译:来自第一原理研究的潜在2D热电材料ATEI(A = SB和BI)单层

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摘要

Lots of two-dimensional (2D) materials have been predicted theoretically and further confirmed in experiments, and have wide applications in nanoscale electronic, optoelectronic and thermoelectric devices. In this work, the thermoelectric properties of ATeI (A = Sb and Bi) monolayers are systematically investigated according to semiclassical Boltzmann transport theory. It is found that spin-orbit coupling (SOC) has an important effect on the electronic transport coefficients of p-type doping, but a negative influence on n-type doping. The room-temperature sheet thermal conductance is 14.2 W K-1 for SbTeI and 12.6 W K-1 for BiTeI, which is lower than that of most well-known 2D materials, such as the transition-metal dichalcogenide, group IV-VI, group VA and group IV monolayers. The very low sheet thermal conductance of ATeI (A = Sb and Bi) monolayers is mainly due to their small group velocities and short phonon lifetimes. The strongly polarized covalent bonds between A and Te or I atoms induce strong phonon anharmonicity, which gives rise to low lattice thermal conductivity. It is found that the high-frequency optical branches contribute significantly to the total thermal conductivity, which is obviously different from the usual picture, where there is little contribution from the optical branches. According to cumulative lattice thermal conductivity with respect to the phonon mean free path (MFP), it is difficult to further reduce the lattice thermal conductivity using nanostructures. Finally, the possible thermoelectric figure of merit ZT values of the ATeI (A = Sb and Bi) monolayers are calculated. It is found that p-type doping has much better thermoelectric properties than n-type doping. At room temperature, the peak ZT can reach 1.11 for SbTeI and 0.87 for BiTeI, respectively. These results make us believe that ATeI (A = Sb and Bi) monolayers may be potential 2D thermoelectric materials, which could stimulate further experimental work towards the synthesis of these monolayers.
机译:理论上已经预测了许多二维(2D)材料,并在实验中进一步证实,并且在纳米级电子,光电器件和热电装置中具有广泛的应用。在这项工作中,根据半透明的Boltzmann运输理论,系统地研究了ATEI(A = SB和BI)单层的热电性能。发现旋转轨道耦合(SoC)对P型掺杂的电子传输系数具有重要影响,而是对N型掺杂的负面影响。室温片热敏为14.2W K-1,对于SBTEI和12.6W k-1的BITEI,低于最着名的2D材料,例如过渡金属二甲烷,IV-VI组, VA组和第四组单层。 ATEI(A = SB和BI)单层的非常低的纸张热导流主要是由于它们的小群速度和短语寿命。 a和te或i原子之间的强偏振的共价键诱导强源性anharononicity,这导致晶格导热率低。结果发现,高频光学分支显着贡献了总导热率,这显然与通常的图像不同,在光学分支几乎没有贡献。根据相对于声子的累积晶格导热率(MFP),难以使用纳米结构进一步降低晶格导热率。最后,计算ATEI(A = SB和BI)单层的可能的优选ZT值的可能热电值。发现p型掺杂具有比N型掺杂更好的热电性能。在室温下,峰值ZT可分别为SBTEI和0.87达到1.11的BITEI。这些结果使我们认为ATEI(A = SB和BI)单层可以是潜在的2D热电材料,其可以刺激对这些单层合成的进一步实验性工作。

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