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High aspect ratio sharp nanotip for nanocantilever integration at CMOS compatible temperature

机译:高纵横比CMOS兼容温度纳米膜膜整合的尖锐纳米纤维

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摘要

In this paper, we demonstrate a novel low temperature nanofabrication approach that enables the formation of ultra-sharp high aspect ratio (HAR) and high density nanotip structures and their integration onto nanoscale cantilever beams. The nanotip structure consists of a nanoscale thermally evaporated Cr Spindt tip on top of an amorphous silicon rod. An apex radius of the tip, as small as 2.5 nm, has been achieved, and is significantly smaller than any other Spindt tips reported so far. 100 nm wide tips with aspect ratio of more than 50 and tip density of more than 5 x 10(9) tips cm(-2) have been fabricated. The HAR tips have been integrated onto an array of 460 nm wide cantilever beams with high precision and yield. In comparison with other approaches, this approach allows the integration of HAR sharp nanotips with nano-mechanical structures in a parallel and CMOS compatible fashion for the first time to our knowledge. Potential applications include on-chip high-speed atomic force microscopy and field emission devices.
机译:在本文中,我们展示了一种新的低温的纳米制备方法,使超锐利高纵横比(HAR)和高密度纳米尖端的结构和它们的集成到纳米级的悬臂梁的形成。纳米尖端结构包括纳米级的热蒸发上的无定形硅棒的顶部的Cr的Spindt尖端。尖端的顶点半径,小如2.5纳米,已经实现,并且比任何其它的Spindt提示报告到目前为止显著小。 100点的超过50的纵横比和超过5×10(9)提示厘米(-2)尖端密度纳米宽的提示已经被制造。的HAR提示已经集成到460纳米宽悬臂阵列具有高精度和产量波束。在与其他方法相比,这种方法使HAR尖锐纳米尖端的,在首次给我们的知识和并行CMOS兼容时尚纳米机械结构的整合。潜在的应用包括片上高速原子力显微镜和场致发射装置。

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