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机译:牺牲ZnO模板上的无缺陷厚铟IngaN纳米结构的纳米选择区域生长
Georgia Inst Technol Sch Elect &
Comp Engn Atlanta GA 30332 USA;
Nanovation 8 Route Chevreuse F-78117 Chateaufort France;
Georgia Tech Lorraine CNRS GT UMI 2958 2 Rue Marconi F-57070 Metz France;
Georgia Tech Lorraine CNRS GT UMI 2958 2 Rue Marconi F-57070 Metz France;
Georgia Inst Technol Sch Elect &
Comp Engn Atlanta GA 30332 USA;
Georgia Tech Lorraine CNRS GT UMI 2958 2 Rue Marconi F-57070 Metz France;
Route Nozay CNRS Lab Photon &
Nanostruct F-91460 Marcoussis France;
Nanovation 8 Route Chevreuse F-78117 Chateaufort France;
Nanovation 8 Route Chevreuse F-78117 Chateaufort France;
Nanovation 8 Route Chevreuse F-78117 Chateaufort France;
Georgia Inst Technol Sch Elect &
Comp Engn Atlanta GA 30332 USA;
Northwestern Univ Ctr Quantum Devices Dept Elect &
Comp Engn Evanston IL 60208 USA;
Northwestern Univ Ctr Quantum Devices Dept Elect &
Comp Engn Evanston IL 60208 USA;
Missouri Univ Sci &
Technol Dept Elect &
Comp Engn Rolla MO 65409 USA;
Georgia Tech Lorraine CNRS GT UMI 2958 2 Rue Marconi F-57070 Metz France;
Georgia Inst Technol Sch Elect &
Comp Engn Atlanta GA 30332 USA;
InGaN; nano selective area growth-NSAG; metal organic vapor phase epitaxy-MOVPE; zinc oxide-ZnO;
机译:牺牲ZnO模板上的无缺陷厚铟IngaN纳米结构的纳米选择区域生长
机译:在GaN /蓝宝石模板上厚,致密,均匀,富In,InGaN纳米结构阵列的纳米级选择性区域生长
机译:在GaN /蓝宝石模板上厚,致密,均匀,富In,InGaN纳米结构阵列的纳米级选择性区域生长
机译:ZnO基牺牲衬底上高铟含量InGaN的生长
机译:一维和二维ZnO纳米结构的生长动力学研究
机译:使用新型ZnO牺牲模板生长水热方法在基底上直接形成金纳米颗粒及其在有机存储器件中的性能
机译:在GaN /蓝宝石模板上厚,致密,均匀,富In,InGaN纳米结构阵列的纳米级选择性区域生长