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机译:由MOVPE选择性地生长的GaAs纳米晶体的结构和光学表征
IHP Technol Pk 25 D-15236 Frankfurt Oder Germany;
ETH Solid State Phys Lab Otto Stern Weg 1 CH-8093 Zurich Switzerland;
Empa Swiss Fed Labs Mat Sci &
Technol Electron Microscopy Ctr Uberlandstr 129 CH-8600 Dubendorf Switzerland;
IHP Technol Pk 25 D-15236 Frankfurt Oder Germany;
IHP Technol Pk 25 D-15236 Frankfurt Oder Germany;
Empa Swiss Fed Labs Mat Sci &
Technol Electron Microscopy Ctr Uberlandstr 129 CH-8600 Dubendorf Switzerland;
Empa Swiss Fed Labs Mat Sci &
Technol Electron Microscopy Ctr Uberlandstr 129 CH-8600 Dubendorf Switzerland;
Empa Swiss Fed Labs Mat Sci &
Technol Electron Microscopy Ctr Uberlandstr 129 CH-8600 Dubendorf Switzerland;
ETH Solid State Phys Lab Otto Stern Weg 1 CH-8093 Zurich Switzerland;
IHP Technol Pk 25 D-15236 Frankfurt Oder Germany;
nanoheteroepitaxy; gallium arsenide; silicon; selective growth; metal organic vapor phase epitaxy; nanostructures; fabrication procedure;
机译:由MOVPE选择性地生长的GaAs纳米晶体的结构和光学表征
机译:MOVPE发射超过1.1 eV的BInGaAs / GaAs量子阱的结构和光学研究
机译:MOVPE在GaAs(001)衬底上生长的InGaAsP混溶间隙固溶体的光学和结构性质
机译:通过透射电子显微镜对MOVPE生长的GaAs / AlGaAs核壳纳米线的结构表征
机译:MOVPE生长的氮化镓基同轴LED的生长,加工和表征
机译:通过Si纳米尖端晶片上的与图案无关的选择性Ge异质外延实现无位错的Ge纳米晶体。
机译:通过显微镜和阴极发光技术在si上选择性生长的单个InGaas量子阱鳍的空间相关结构和光学表征