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Laser direct writing and inkjet printing for a sub-2 mu m channel length MoS2 transistor with high-resolution electrodes

机译:具有高分辨率电极的Sub-2 MU M通道长度MOS2晶体管的激光直接写入和喷墨印刷

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摘要

Patterns formed by the laser direct writing (LDW) lithography process are used either as channels or barriers for MoS2 transistors fabricated via inkjet printing. Silver (Ag) nanoparticle ink is printed over patterns formed on top of the MoS2 flakes in order to construct high-resolution source/drain (S/D) electrodes. When positive photoresist is used, the produced grooves are filled with inkjetted Ag ink by capillary forces. On the other hand, in the case of negative photoresist, convex barrier-like patterns are written on the MoS2 flakes and patterns, dividing the printed Ag ink into the S/D electrodes by self-alignment. LDW lithography combined with inkjet printing is applied to MoS2 thin-film transistors that exhibit moderate electrical performance such as mobility and subthreshold swing. However, especially in the linear operation regime, their features are limited by the contact effect. The. Y-function method can exclude the contact effect and allow proper evaluation of the maximum available mobility and contact resistance. The presented fabrication methods may facilitate the development of cost-effective fabrication processes.
机译:由激光直接写入(LDW)光刻工艺形成的图案作为通过喷墨印刷制造的MOS2晶体管的通道或屏障。在MOS2薄片顶部形成的图案上印刷银(Ag)纳米颗粒墨水,以构建高分辨率源/漏极(S / D)电极。当使用正光致抗蚀剂时,产生的凹槽通过毛细力填充有喷墨的Ag油墨。另一方面,在负光致抗蚀剂的情况下,通过自对准将印刷AG墨水划分为S / D电极的凸屏障样图案。 LDW光刻与喷墨打印相结合,应用于MOS2薄膜晶体管,其表现出适度的电气性能,例如移动性和亚阈值摆动。然而,特别是在线性操作状态下,它们的特征受接触效果的限制。这。 Y函数方法可以排除接触效果并允许对最大可用移动性和接触电阻进行适当的评估。所提出的制造方法可以促进经济有效的制造过程的发展。

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