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Strain-induced dimensional phase change of graphene-like boron nitride monolayers

机译:石墨烯氮化硼单层的应变诱导的尺寸相变

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摘要

We investigate the coupling between the electronic bandgap and mechanical loading of graphene-like boron nitride (h-BN) monolayers up to failure strains and beyond by means of first-principles calculations. We reveal that the kinks in the bandgap-strain curve are coincident with the ultimate tensile strains, indicating a phase change. When the armchair strain is beyond the ultimate tensile strain, h-BN fails with a phase transformation from 2D honeycomb to 1D chain structure, characterized by the 'V'-shape bandgap-strain curve. Large biaxial strains can break the 2D honeycomb structures into 0D individual atoms and the bandgap closes.
机译:我们研究了石墨烯氮化硼(H-Bn)单层的电子带隙和机械加载的耦合,通过第一原理计算来达到衰竭菌株及超越菌株。 我们揭示了带隙 - 应变曲线中的扭结与最终拉伸菌株一致,表明相变。 当扶手椅应变超出最终拉伸菌株时,H-BN失效,从2D蜂窝状到1D链结构的相变,其特征在于“V'形带隙 - 应变曲线。 大的双轴菌株可以将2D蜂窝结构破坏为0d单独原子,带隙关闭。

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