Contact engineering high-performance ambipolar multilayer tellurium transistors

摘要

Multilayer Te nanosheets have attracted increasing attention due to their high-performance electronic transport properties and good air-stability. Theoretical simulation suggests that the electronic properties of multilayer Te nanosheets could be effectively modulated by contact engineering, but most studies have reported p-type multilayer Te devices. Here, for the first time, we report on high performance ambipolar multilayer Te filed-effect-transistors (FETs) with low work function scandium (Sc, 3.58 eV), demonstrating high mobilities of 489 and 648 cm(2)V(-1)s(-1) for electron and hole transport, respectively. Multilayer Te FETs with large work function metals, such as chromium (Cr, 4.5 eV), show a typical p-type transport behavior. The band structure of multilayer Te with a small bandgap and low work function Sc result in a small contact resistance (R-c) for both of electron and hole transport, which leads to the ambipolar behavior of multilayer Te nanosheets. The ambipolar behavior of multilayer Te FETs indicates that contact engineering is a valid tool to tune the electrical properties of multilayer Te and raises the possibility of designing digital circuits based on multilayer Te.