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Plasmon-induced Ag decorated CeO2 nanorod array for photodetector application

机译:等离子体诱导的AG装饰CEO2 NANOROD阵列,用于光电探测器应用

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In this work, glancing angle deposition (GLAD) has been used to grow Ag decorated CeO2 nanorod (NR) array on n-type Si substrate. The length of the NRs obtained was similar to 235 nm and the size of the Ag NPs varied from 13 to 41 nm. The polycrystalline and crystalline nature of CeO2 and Ag respectively was revealed via selected area electron diffraction (SAED) analysis as well as x-ray diffraction (XRD) pattern. Optical absorption measurement depicts a distinct broad peak around 413 nm that is ascribed to the localized surface plasmon resonance (LSPR) effect of Ag NPs. The Ag decorated CeO2 NR device exhibited a turn on voltage at similar to 3.2 V under dark, which then reduced to similar to 1.3 V under 35 min illumination along with the increase in device current from 2.8 to 24.5 mu A cm(-2) (4 V) on continuous exposure to light. Under white light illumination, a responsivity of 4.51 A W-1 was obtained at 370 nm along with the detectivity and noise equivalent power (NEP) values of 4.15 x 10(12) jones and 0.01 pW respectively. Additionally, a fast response characteristic with rise and fall times of 74 ms and 42 ms respectively was demonstrated. Thus, these findings manifest the underlying LSPR mechanism at work in Ag/CeO2 heterojunction and reveal its high potential in UV photodetector application.
机译:在这项工作中,瞥了一眼沉积(高兴)已被用于在N型Si衬底上生长装饰CEO2纳米棒(NR)阵列。所得NR的长度与235nm类似,并且Ag nps的尺寸从13-41nm变化。分别通过选定的区域电子衍射(SAED)分析以及X射线衍射(XRD)图案来揭示CEO2和AG的多晶和结晶性质。光学吸收测量描绘了413nm的不同宽峰,其归因于Ag NPS的局部表面等离子体共振(LSPR)效应。 AG装饰CEO2 NR器件在黑暗中显示出与3.2V相似的电压,然后在35分钟照明下减少至类似于1.3V的照明,随着器件电流的增加,从2.8到24.5μm(-2)(-2))( 4 v)在连续接触光线下。在白光照射下,4.51A W-1的响应度在370nm处以及探测和噪声等效功率(NEP)值分别为4.15×10(12)千克和0.01pW。另外,证明了具有74ms和42ms的上升和下降时间的快速响应特性。因此,这些发现表现出AG / CeO2异质结的工作中的基础LSPR机制,并在UV光电探测器应用中揭示其高电位。

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