Improvement of power conversion efficiency by a stepwise band-gap structure for silicon quantum dot solar cells

摘要

As a promising next-generation solar cell, the power conversion efficiency of a silicon quantum dot (Si-QD) solar cell is still low. In this work, the band-gap structure of a Si-QD layer was modified to improve the power conversion efficiency of a Si-QD solar cell. A stepwise band-gap Si-QD (SB Si-QD) layer with a high bandgap top layer (about 2.22 eV) and a low band-gap bottom layer (about 1.98 eV) was grown on a Si (100) substrate. The open circuit voltage and short circuit current were improved by band-gap engineering of the Si-QD absorption layer. As a result, the power conversion efficiency of the SB Si-QD solar cell increased from 16.50% to 17.50%, compared to that of a Si-QD solar cell with a uniform band gap. This results will provide a guide to design advanced Si-QD solar cells by considering the band-gap structure in the Si-QD absorption layer.