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机译:用于大面积高移动场效应晶体管的改进的皱纹MOS2薄膜转移方法
Univ Chinese Acad Sci High Frequency High Voltage Device &
Integrated C Inst Microelect Chinese Acad Sci Beijing 100029 Peoples R China;
Univ Chinese Acad Sci High Frequency High Voltage Device &
Integrated C Inst Microelect Chinese Acad Sci Beijing 100029 Peoples R China;
Univ Chinese Acad Sci High Frequency High Voltage Device &
Integrated C Inst Microelect Chinese Acad Sci Beijing 100029 Peoples R China;
Nanchang Univ Dept Mat Sci &
Engn 999 Xuefu Ave Nanchang 330031 Jiangxi Peoples R China;
Univ Chinese Acad Sci High Frequency High Voltage Device &
Integrated C Inst Microelect Chinese Acad Sci Beijing 100029 Peoples R China;
CVD MoS2; transfer; large area; back-gate transistors; mobility; on/off ratio;
机译:用于大面积高移动场效应晶体管的改进的皱纹MOS2薄膜转移方法
机译:通过H_2O_2处理改性的栅SiO_2电介质的有机薄膜晶体管中随温度变化的场效应载流子迁移率
机译:通过在半导体薄膜上覆盖不连续的电荷转移掺杂层纳米补丁,在有机场效应晶体管中显着提高迁移率并降低阈值电压
机译:使用带负电的氧氮化铝栅极电介质的高场效应迁移率非晶态铟锡锌氧化物薄膜晶体管
机译:增强有机薄膜晶体管的场效应迁移率。
机译:高迁移率和空气稳定的单层WS2场效应晶体管夹在化学气相沉积生长的六角形BN膜之间
机译:场效应晶体管:单层六边形氮化硼膜,具有大畴尺寸和清洁界面,用于增强基于石墨烯的场效应晶体管的迁移率(ADV。Mater。10/2014)