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Phase-dependent gas sensitivity of MoS2 chemical sensors investigated with phase-locked MoS2

机译:用相位锁定的MOS2研究MOS2化学传感器的相位依赖气体敏感性

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In the present study, phase-dependent gas sensitivities of MoS2 chemical sensors were examined. While 1T-phase MoS2 (1T-MoS2) has shown better chemical sensitivity than has 2H-phase MoS2 (2H-MoS2), the instability of the 1T phase has been hindering applications of 1T-MoS2 as chemical sensors. Here, the chemical sensitivity of MoS2 locked in its 1T phase by using a ZnO phase lock was investigated. To develop MoS2 chemical sensors locked in the 1T phase, we synthesized a multi-dimensional nanomaterial by growing ZnO nanorods onto MoS2 nanosheets (ZnO@1T-MoS2). Raman spectroscopy and x-ray photoelectron spectroscopy analyses of such phase-locked 1T-MoS2 subjected to flash light irradiation 100 times confirmed its robustness. ZnO nanomaterials hybridized on MoS2 nanosheets not only froze the MoS2 at its 1T phase, but also increased the active surface area for chemical sensing. The resulting hybridized material showed better response, namely better sensitivity, to NO2 gas exposure at room temperature than did 1T-MoS2 and 2H-MoS2. This result indicated that increased surface area and heterojunction formation between MoS2 and ZnO constitute a more promising route for improving sensitivity than using the 1T phase itself.
机译:在本研究中,检查了MOS2化学传感器的相位依赖性气体敏感性。虽然1T相MOS2(1T-MOS2)示出了比具有2H相MOS2(2H-MOS2)更好的化学灵敏度,但是1T相的不稳定性一直在妨碍1T-MOS2作为化学传感器的应用。这里,研究了通过使用ZnO相锁在其1T相中锁定在其1T相中的MOS2的化学敏感性。为了开发锁定在1T相中的MOS2化学传感器,我们通过将ZnO纳米棒生长到MOS2纳米片(ZnO @ 1T-MOS2)上来合成多维纳米材料。拉曼光谱和X射线光电子能谱分析的这种相位锁定的1T-MOS2经受闪光照射100次确认其鲁棒性。 ZnO纳米材料在MOS2纳米片上杂交不仅将MOS2冻结在其1T相位,而且还增加了用于化学感测的活性表面积。所得杂交的材料显示出更好的反应,即更好的敏感性,在室温下的NO2气体暴露于1T-MOS2和2H-MOS2。该结果表明,MOS2和ZnO之间的表面积和异质结形成构成了提高比使用1T相本身的灵敏度更有前途的途径。

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