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Growth orientation mechanism of TiO2 nanotubes fabricated by anodization

机译:阳极氧化制造的TiO2纳米管的生长取向机理

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摘要

TiO2 nanotubes (TNTs) fabricated by anodization have been extensively researched in recent years. However, the mechanism that controls the growth orientation of anodic TNTs is still not clear. Here, we firstly examine their growth orientation systematically. Combined with the previous literature, the results of anodization on rotated Ti foil and thin Ti wire confirm that almost all of the TNTs grow vertically to the local Ti substrate surface. Their growth orientation predominantly depends on the local electric field around the bottom of the nanotube. The distribution of the local electric field is regulated by the shape of the initial nano-scale local Ti substrate surface (INLTSS). Most of the INLTSS is nearly flat, which leaves vertical, circular, and straight TNTs. In terms of the evolution of TNTs fabricated on a micron-scale convex surface, the vertical growth of TNTs leads to a continuous decrease in the oxide/substrate (O/S) interface area, and a few TNTs are periodically crushed and detached from the O/S interface. For a micron-scale concave surface, due to the ever-increasing O/S interface area, Y-branched TNTs occurred periodically as a response to avoid a vacancy on the oxide/substrate interface.
机译:近年来,由阳极氧化制造的TiO2纳米管(TNT)已被广泛研究。然而,控制阳极TNT的生长取向的机制仍然不明确。在这里,我们首先系统地检查了他们的增长方向。结合先前的文献,旋转的Ti箔和薄Ti线上的阳极氧化的结果确认几乎所有TNT垂直地生长到局部Ti衬底表面。它们的生长取向主要取决于纳米管底部周围的局部电场。局部电场的分布由初始纳米级局部TI衬底表面(INLTS)的形状调节。大多数衬垫几乎是平坦的,叶子垂直,圆形和直线TNT。就微粒凸面上制造的TNT的演变而言,TNT的垂直生长导致氧化物/衬底(O / S)界面面积连续降低,并且几个TNT周期性地压碎并从中拆下O / S接口。对于微米级凹面,由于不断增加的O / S接口区域,周期性地发生Y形TNT作为避免氧化物/衬底界面上的空位的响应。

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