...
机译:用于近红外应用的Gaassb / Gaassbn / GaAIAS核心纳米线的分子束外延生长
North Carolina A&
T State Univ Nanoengn Joint Sch Nanosci &
Nanoengn Greensboro NC 27401 USA;
North Carolina A&
T State Univ Nanoengn Joint Sch Nanosci &
Nanoengn Greensboro NC 27401 USA;
North Carolina A&
T State Univ Dept Elect &
Comp Engn Greensboro NC 27411 USA;
North Carolina A&
T State Univ Nanoengn Joint Sch Nanosci &
Nanoengn Greensboro NC 27401 USA;
North Carolina A&
T State Univ Nanoengn Joint Sch Nanosci &
Nanoengn Greensboro NC 27401 USA;
core-shell NWs; molecular beam epitaxy; dilute nitride NWs; photoluminescence spectroscopy; GaAsSbN; bandgap engineering;
机译:用于近红外应用的Gaassb / Gaassbn / GaAIAS核心纳米线的分子束外延生长
机译:分子束外延自生生长稀氮化物GaAs / GaAsSbN / GaAs核壳纳米线
机译:InP / GaAsSb / InP双异质结双极晶体管的分子束外延生长和表征
机译:InP / GaAsSb / InP双异质结双极晶体管的分子束外延生长和表征
机译:用于红外光电探测器应用的分子束外延生长的Gaassb(n)纳米线的研究
机译:在电信波长范围内高砷掺入GaAsSb纳米线的两步生长途径
机译:Bi2Se3纳米线和纳米薄片的分子束外延生长