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Structural, chemical, and magnetic properties of cobalt intercalated graphene on silicon carbide

机译:碳化硅上钴插入石墨烯的结构,化学和磁性

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We report on a study of the Co intercalation process underneath the (6 root 3 x 6 root 3) R30 degrees reconstructed 6H-SiC(0001) surface for Co film-thicknesses in a range of 0.4-12 nm using a combination of surface sensitive imaging, diffractive, and spectroscopic methods. In situ photoemission electron microscopy reveals a dependence of the intercalation temperature on the Co film-thickness. Using low energy electron diffraction and photoemission spectroscopy (XPS), we find that the SiC surface reconstruction is partially lifted and transformed. We show that the (6 root 3 x 6 root 3) R30 degrees reconstruction does not prevent silicide formation for Co film-thicknesses = 0.4 nm according to XPS and x-ray absorption spectra. Our results indicate that the silicide formation is self-limited to a thin interface region and is followed by Co intercalation between graphene and silicide. Furthermore, we analyze the magnetic properties using x-ray magnetic circular dichroism at the Co L-edge. In-plane magnetization is observed for all analyzed filmthicknesses. For ultra-thin Co films, self-assembled magnetic wires with a width of the order of 100 nm form at the step-edges.
机译:我们报告(6根4×6根3)R30度下面的CO嵌入过程的研究重建了6h-SiC(0001)表面,用于使用表面敏感的组合在0.4-12nm的范围内的2.4-12nm的膜厚度成像,衍射和光谱方法。在原位光曝光电子显微镜下显示嵌入温度对CO膜厚度的依赖性。使用低能量电子衍射和光曝光光谱(XPS),我们发现SIC表面重建部分地抬起和变换。我们表明(6根TOOT 3 X 6根4)R30度重建不防止CO膜厚度的硅化物形成& = 0.4nm,根据XPS和X射线吸收光谱。我们的结果表明,硅化物形成自限于薄界面区域,然后在石墨烯和硅化物之间进行CO嵌段。此外,我们在CO L边缘使用X射线磁圆形二色性分析磁性。对于所有分析的电影仪观察到在线磁化。对于超薄CO膜,在梯度边缘处具有100nm形式宽度的自组装磁线。

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