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机译:接口污染对MOS_2场效应晶体管的影响和改进的制造过程,以追求更好的界面质量
University of Chinese Academy of Sciences Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 People's Republic of China;
University of Chinese Academy of Sciences Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 People's Republic of China;
University of Chinese Academy of Sciences Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 People's Republic of China;
University of Chinese Academy of Sciences Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 People's Republic of China;
University of Chinese Academy of Sciences Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 People's Republic of China;
MoS_2; interface; contamination; photoresist; Al_2O_3; fabrication; CVD;
机译:接口污染对MOS_2场效应晶体管的影响和改进的制造过程,以追求更好的界面质量
机译:接口污染对MOS2场效应晶体管的影响和改进的制造过程,以追求更好的界面质量
机译:通过用锌卟啉修饰源极和漏极电极界面来制造单极石墨烯场效应晶体管
机译:具有高k电介质的几层MOS_2场效应晶体管中临界接口的研究
机译:低压有机薄膜晶体管(OTFT),具有溶液处理的高k介电层和界面工程。
机译:通过分子遗传学方法对免疫修饰的场效应晶体管(ImmunoFET)进行工程功能蛋白接口
机译:利用氟化聚合物的扩散改变溶液处理的共轭聚合物场效应晶体管中的半导体/介电界面