Defect influence on in-plane photocurrent of InAs/InGaAs quantum dot array: long-term electron trapping and Coulomb screening

摘要

Metamorphic InAs/In0.15Ga0.85 As and InAs/In0.31Ga0.69 As quantum dot (QD) arrays are known to be photosensitive in the telecommunication ranges at 1.3 and 1.55 mu m, respectively; however, for photonic applications of these nanostructures, the effect of levels related to defects still needs in-depth investigation. We have focused on the influence of electron traps of defects on photocurrent (PC) in the plane of the QD array, studying by PC and deep level thermally stimulated current spectroscopy together with HRTEM and theoretical modeling. In the structures, a rich spectrum of electron trap levels of point defects EL6 (E-c - 0.37 eV), EL7 (0.29-0.30 eV), EL8 (0.27 eV), EL9/M2 (0.22-0.23 eV), EL10/M1 (0.16 eV), M0 (similar to 0.11 eV) and three extended defects ED1/EL3 (0.52-0.54), ED2/EL4 (0.47-0.48 eV), ED3/EL5 (0.42-0.43 eV) has been identified. Among them, new defect levels undiscovered earlier in InAs/InGaAs nanostructures has been detected, in particular, EL8 and M0. The found electron traps are shown to affect a time-dependent PC at low temperatures. Besides a long-term kinetics due to trap charging, a prolonged PC decrement versus time is measured under constant illumination. The decrement is interpreted to be related to a Coulomb screening of the conductivity channel by the electrons captured in the QD interface traps. The decrement is well fitted by allometric exponents, which means many types of traps involved in electron capturing. This study provides new findings into the mechanism of in-plane PC of QD arrays, showing a crucial importance of growth-related defects on photoresponsivity at low temperatures.