Simultaneous growth of Ga2S3 and GaS thin films using physical vapor deposition with GaS powder as a single precursor

摘要

High quality gallium sulfide II (GaS) and gallium sulfide III (Ga2S3) thin films on SiO2/Si substrates were simultaneously grown by using physical vapor deposition with GaS powder as a single precursor. By controlling the substrate temperature, we can selectively grow either GaS or Ga2S3 thin films on SiO2/Si substrates. Relatively high and low substrate temperature conditions resulted in Ga2S3 and GaS thin films, respectively. The synthesized thin films were characterized by x-ray diffraction, Raman spectroscopy, field emission scanning electron microscopy, atomic force microscopy, and x-ray photoelectron spectroscopy analyses.