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首页> 外文期刊>Nanotechnology >Designing WO3/CdIn2S4 type-II heterojunction with both efficient light absorption and charge separation for enhanced photoelectrochemical water splitting
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Designing WO3/CdIn2S4 type-II heterojunction with both efficient light absorption and charge separation for enhanced photoelectrochemical water splitting

机译:设计WO3 / CDIN2S4 Type-II异质结,具有高效的光吸收和电荷分离,用于增强的光电化学水分解

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摘要

WO3 is a typical photoanode material for photoelectrochemical (PEC) water splitting. However, the PEC activity of WO3 photoanode is limited by its poor visible light absorption as well as severe carrier recombination at the electrode/electrolyte interface. Herein, we integrate smallband-gap CdIn2S4 nanoplates with hydrothermally grown WO3 nanowall arrays to form into a three-dimensional (3D) WO3/CdIn2S4 heterojunction through a chemical bath deposition process. The synthesis parameters of CdIn2S4, including reaction time and temperature, have been tuned to optimize the PEC performance. The WO3/CdIn2S4 composite photoanode prepared at 50 degrees C for 5 h exhibits the highest photocurrent of 1.06 mA cm(-2) at 1.23 V versus reversible hydrogen electrode without the presence of holes scavenger, which is about 5.9 times higher than that of bare WO3 photoanode. The band alignment between WO3 and CdIn2S4 is confirmed by the ultraviolet-visible light absorption spectra and ultraviolet photoelectron spectra. The PEC performance enhancement is attributed to the enhanced light absorption benefiting from the small band gap of CdIn2S4 and efficient charge separation originating from the type-II alignment between WO3 and CdIn2S4.
机译:WO3是用于光电化学(PEC)水分解的典型光电阳极材料。然而,WO3光电阳极的PEC活性通过其差可见光吸收以及在电极/电解质界面严重载流子复合的限制。在此,我们通过化学浴沉积过程整合smallband隙与水热生长的WO3纳米壁阵列形式CdIn2S4纳米板成三维(3D)WO3 / CdIn2S4异质结。 CdIn2S4的合成参数,包括反应时间和温度,已经被调谐以优化PEC性能。在50℃下制备的5小时的WO3 / CdIn2S4复合光电阳极在的1.23V相对于可逆氢电极表现出的1.06毫安厘米(-2)的最高光电流没有孔清除剂的存在,这比的裸高约5.9倍WO3光阳极。 WO3和CdIn2S4之间的带对准是通过紫外线 - 可见光吸收光谱和紫外光电子谱证实。在PEC性能增强归因于增强的光吸收从CdIn2S4的小的带隙和有效的电荷分离源自WO3和CdIn2S4之间的II型取向中获益。

著录项

  • 来源
    《Nanotechnology》 |2019年第49期|共10页
  • 作者单位

    Soochow Univ Jiangsu Key Lab Thin Films Sch Phys Sci &

    Technol Ctr Energy Convers Mat &

    Phys Suzhou 215006 Peoples R China;

    Soochow Univ Jiangsu Key Lab Thin Films Sch Phys Sci &

    Technol Ctr Energy Convers Mat &

    Phys Suzhou 215006 Peoples R China;

    Soochow Univ Jiangsu Key Lab Thin Films Sch Phys Sci &

    Technol Ctr Energy Convers Mat &

    Phys Suzhou 215006 Peoples R China;

    Soochow Univ Jiangsu Key Lab Thin Films Sch Phys Sci &

    Technol Ctr Energy Convers Mat &

    Phys Suzhou 215006 Peoples R China;

    Soochow Univ Jiangsu Key Lab Thin Films Sch Phys Sci &

    Technol Ctr Energy Convers Mat &

    Phys Suzhou 215006 Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 特种结构材料;
  • 关键词

    WO3; CdIn2S4; heterojunction; photoanode; photoelectrochemical water splitting;

    机译:WO3;cdin2s4;异质结;photoanode;光电化学水分裂;

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