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机译:杂交通道诱导纳米晶体 - Si:H / A-SIN_X:H电阻切换存储器的无成形性能
School of Electronic Science and Engineering Nanjing University Nanjing 210093 People's Republic of China;
School of Electronic Science and Engineering Nanjing University Nanjing 210093 People's Republic of China;
School of Electronic Science and Engineering Nanjing University Nanjing 210093 People's Republic of China;
School of Electronic Science and Engineering Nanjing University Nanjing 210093 People's Republic of China;
School of Electronic Science and Engineering Nanjing University Nanjing 210093 People's Republic of China;
School of Electronic Science and Engineering Nanjing University Nanjing 210093 People's Republic of China;
School of Electronic Science and Engineering Nanjing University Nanjing 210093 People's Republic of China;
School of Electronic Science and Engineering Nanjing University Nanjing 210093 People's Republic of China;
School of Electronic Science and Engineering Nanjing University Nanjing 210093 People's Republic of China;
Si dangling bond; SiN resistive switching memory; nanocrystalline silicon;
机译:杂交通道诱导纳米晶体 - Si:H / A-SIN_X:H电阻切换存储器的无成形性能
机译:通过基于TiO_2的无形成电阻式随机存取存储器中的非晶ZrO_2层形成来改善电阻切换性能
机译:Ga2O3 / ZnO复合膜的原子层沉积,用于高性能无成形电阻开关存储器
机译:等离子体氧化诱导的a-SiN
机译:金属/ pr钙锰矿界面中的电场感应电阻切换:未来非易失性存储设备的模型。
机译:非化学计量二氧化铈薄膜中的无形双极电阻转换
机译:在溶液加工硅纳米晶体薄膜中无成形电阻切换