Noise spectroscopy to study the 1D electron transport properties in InAs nanowires

摘要

InAs nanowires (NWs) are recognized as a key material due to their unique transport properties. Despite remarkable progress in designing InAs NW device structures, there are still open questions on device variability. Here, we demonstrate that noise spectroscopy allows us to study not only the parameters of traps, but also to shed light on quantum transport in NW structures. This provides an important understanding of structural behavior as well as the background and strategy required to design NW structures with advanced properties.