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机译:基于化学处理过的表面缺陷的ZnO纳米线存储器件的面部制造
King Abdullah Univ Sci &
Technol Comp Elect Math Sci &
Engn Thuwal 239666900 Saudi Arabia;
Chungbuk Natl Univ Dept Adv Mat Engn Chungbuk 28644 South Korea;
Chungbuk Natl Univ Dept Adv Mat Engn Chungbuk 28644 South Korea;
Chungbuk Natl Univ Dept Adv Mat Engn Chungbuk 28644 South Korea;
King Abdullah Univ Sci &
Technol Phys Sci &
Engn Div Thuwal 239666900 Saudi Arabia;
King Abdullah Univ Sci &
Technol Comp Elect Math Sci &
Engn Thuwal 239666900 Saudi Arabia;
King Abdullah Univ Sci &
Technol Comp Elect Math Sci &
Engn Thuwal 239666900 Saudi Arabia;
Chungbuk Natl Univ Dept Adv Mat Engn Chungbuk 28644 South Korea;
chemically-treated ZnO nanowire; surface defects; memory effect;
机译:基于化学处理过的表面缺陷的ZnO纳米线存储器件的面部制造
机译:低成本,大面积,方便且快速制造对准的ZnO纳米线器件阵列
机译:以Al_2O_3层为存储节点的基于ZnO纳米线的非易失性存储设备
机译:ZnO纳米线基有机体异质结器件中的光学记忆效应
机译:取向ZnO压电薄膜的制备与评价及其在声表面波器件中的应用
机译:ZnO纳米线薄膜的大规模制备的简便方法及其光催化应用
机译:低成本,大面积,便捷,快速制造对准的ZnO纳米线器件阵列
机译:用于大规模生产ZnO纳米线集成器件的表面模板组装