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首页> 外文期刊>Journal of Physics. Condensed Matter >Defect mediated photocatalytic decomposition of 4-chlorophenol on epitaxial rutile thin films under visible and UV illumination
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Defect mediated photocatalytic decomposition of 4-chlorophenol on epitaxial rutile thin films under visible and UV illumination

机译:可见光和紫外光下缺陷介导的4-氯苯酚在外延金红石薄膜上的光催化分解

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We show that pure rutile TiO_2 can be photo-responsive even under low energy visible light after annealing in vacuum where we envisage that the point defects, i.e.oxygen vacancies and titanium interstitials, serve an important role. In this study, single crystal rutile films were grown by the pulsed laser deposition technique and then vacuum annealed under different oxygen pressures to introduce defects into their lattices. 4-chlorophenol was selected as a model material and decomposed by the annealed TiO_2 films where the maximum photocatalytic reaction rate constants were determined as 0.0107 and 0.0072min ~1 under UV and visible illumination. Epitaxial growth along the [200] direction was confirmed by -scan and 2θ-scan XRD and the epitaxial relationship between the rutile film and the c-sapphire substrate was explained as. The formation of atomically sharp interfaces and the epitaxial growth were ascertained by annular dark-field STEM imaging. Based on the XPS, UV-vis and PL spectroscopy results, it was found that the defect concentration increased after annealing under lower pressures, e.g.5×10 ~6Torr. In contrast, more perfect crystals were obtained when the films were annealed under high oxygen pressures, namely 5×10 ~1Torr. The morphology of the films was also investigated by employing an AFM technique. It was observed that increase of the annealing pressure results in the formation of larger grains. It was also found that the electrical resistivity of the rutile films strongly increased by about three orders of magnitude when the annealing pressure increased from 5×10 ~4 to 5×10 ~1Torr.
机译:我们证明了纯金红石型TiO_2即使在真空中退火后即使在低能可见光下也可以具有光响应性,我们设想点缺陷(即氧空位和钛间隙)起着重要的作用。在这项研究中,单晶金红石薄膜是通过脉冲激光沉积技术生长的,然后在不同的氧气压力下进行真空退火,从而将缺陷引入其晶格中。选择4-氯苯酚作为模型材料,并经退火的TiO_2薄膜分解,在紫外和可见光下,最大光催化反应速率常数确定为0.0107和0.0072min〜1。通过-scan和2θ-scanXRD确认了沿[200]方向的外延生长,并解释了金红石膜与c-蓝宝石衬底之间的外延关系。通过环形暗场STEM成像确定原子尖锐界面的形成和外延生长。根据XPS,UV-vis和PL光谱结果,发现缺陷浓度在5×10〜6Torr的较低压力下退火后增加。相反,当在5×10〜1Torr的高氧气压力下对膜进行退火时,获得了更完美的晶体。还通过采用AFM技术研究了膜的形态。观察到退火压力的增加导致形成较大的晶粒。还发现,当退火压力从5×10〜4增加到5×10〜1Torr时,金红石膜的电阻率大大增加了大约三个数量级。

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