首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Weak link behavior of Sn doped (Cu_(0.5)Tl_(0.5))Ba_2Ca_2(Cu_(3-x)Sn_x)O_(10-delta) superconductors
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Weak link behavior of Sn doped (Cu_(0.5)Tl_(0.5))Ba_2Ca_2(Cu_(3-x)Sn_x)O_(10-delta) superconductors

机译:Sn掺杂(Cu_(0.5)Tl_(0.5))Ba_2Ca_2(Cu_(3-x)Sn_x)O_(10-delta)超导体的弱链接行为

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摘要

(Cu_(0.5)Tl_(0.5))Ba_2Ca_2(Cu_(3-x)Sn_x)O_(10-delta)(x=0,0.25, 0.5,0.75,1.0,1.25,1.5) superconductor samples have been synthesized using solid state reaction method and studied their weak link behavior by carrying out infield ac-susceptibility measurements. These samples have shown a systematic decrease of zero resistivity critical temperature [T_c(R = 0)] with increase Sn doping. The onset of diamagnetism is shifted to lower temperature values and the magnitude of diamagnetism is suppressed. The suppression of magnitude of diamagnetism may possibly be due to increased localization of mobile carriers at Sn~(4+) atoms in SnO_2/CuO_2 planes. The J_c of the samples calculated by using Bean's critical field model have been found to suppress with enhanced Sn doping. The J_c values so obtained are fitted to the power law behavior of the type (1 - T_p/T_c)~n of various values of n. A best fit of n = 1 appropriate for the superconductor insulator superconductor junction (SIS) is achieved both for as-prepared and oxygen annealed samples. The insulating material formed at the grain boundaries is due to oxygen diffusion which possibly provides large surface areas to the shielding currents and enhances the J_c of the final compound.
机译:使用固体合成了(Cu_(0.5)Tl_(0.5))Ba_2Ca_2(Cu_(3-x)Sn_x)O_(10-δ)(x = 0,0.25,0.5,0.75,1.0,1.25,1.5)超导体样品态反应方法,并通过进行场内磁化率测量研究了它们的弱链接行为。这些样品显示随着Sn掺杂的增加,零电阻率临界温度[T_c(R = 0)]会系统降低。反磁性的发生转移到较低的温度值,并且反磁性的大小被抑制。磁阻强度的抑制可能是由于移动载流子在SnO_2 / CuO_2平面上的Sn〜(4+)原子处的定位增加。已经发现通过使用Bean的临界场模型计算出的样本的J_c可通过增强的Sn掺杂来抑制。如此获得的J_c值适合于各种n值的(1-T_p / T_c)〜n类型的幂律行为。对于准备好的样品和氧气退火的样品,均达到n = 1的最佳拟合,适用于超导体绝缘体超导体结(SIS)。在晶界处形成的绝缘材料归因于氧扩散,这可能会为屏蔽电流提供较大的表面积并提高最终化合物的J_c。

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