Modification of electrical properties of the Au/1,1' dimethyl ferrocenecarboxylate-Si Schottky diode

摘要

The electrical and interface state density properties of the Au/1,1' dimethyl ferrocenecarboxylate (DMFC)-Si structure have been investigated by current-voltage, capacitance-voltage and conductance-frequency methods. The Au/DMFC-Si structure exhibits a rectifying behavior with a non-ideal /-V behavior with an ideality factor greater than unity. The ideality factor and barrier height of the Au/DMFC-Si Schottky diode is lower than that of Au-Si Schottky diode. The interface state density of the diode was determined from G/ω-/plots and was of order of 5.61 x 10~(12) eV~(-1) cm~(-2). It is evaluated that the electrical properties of Au-Si diode is controlled using V dimethyl ferrocenecarboxylate organic layer and in turn, Au/DMFC-Si structure gives new electronic parameters.