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Emergence of ferroelectricity in antiferroelectric nanostructures

机译:反铁电纳米结构中铁电的出现

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摘要

First-principles-based finite-temperature simulations are used to predict the emergence of ferroelectricity in antiferroelectric nanostructures made of PbZrO3. The phenomenon is expected to occur in antiferroelectric nanodots, nanowires, and thin films with good surface charge compensation and can be explained by the recently proposed surface effect [1]. Our computations provide a microscopic insight into the equilibrium phases, phase competition, and electrical properties of PbZrO3 nanostructures. The dependence of these properties on the electrical boundary conditions and nanostructure size is investigated.
机译:基于第一原理的有限温度模拟用于预测由PbZrO3制成的反铁电纳米结构中铁电的出现。预期该现象会在具有良好表面电荷补偿的反铁电纳米点,纳米线和薄膜中发生,并且可以用最近提出的表面效应来解释[1]。我们的计算为PbZrO3纳米结构的平衡相,相竞争和电学性质提供了微观见解。研究了这些性质对电边界条件和纳米结构尺寸的依赖性。

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