KOH post-etching-induced rough silicon nanowire array for H-2 gas sensing application

摘要

The limited surface area and compacted configuration of silicon nanowires (SiNWs), which are made by one-step metal-assisted chemical etching (MACE) go against target gas diffusion and adsorbtion for gas sensing application. To harvest suitable gas sensitivity and fast response-recovery characteristics, an aligned, rough SiNW array with loose configuration and high surface area was fabricated by a two-step etching process. The MACE technique was first employed to fabricate a smooth SiNW array, and then a KOH post-etching method was developed to roughen the NW surface further. The influence of the KOH post-etching time on the array density and surface roughness of the SiNWs was investigated, and the H-2-sensing properties of the sensor based on the as-fabricated rough SiNW array were evaluated systematically at room temperature. It was revealed that the post-etching of KOH roughens the NW surface effectively, and also decreases the wire diameter and array density considerably. The resulting configuration of the SiNW array with high active surface and loose geometry is favorable for gas sensing. Consequently, the rough SiNW array-based sensor exhibited a linear response to H-2 with a wide range of concentrations (50-10 000 ppm) at room temperature. Good stability and selectivity, satisfying response-recovery characteristics were also achieved. However, over-etching of SiNWs by KOH solution results in a considerable decrease in surface roughness and then in the H-2-sensing response of the NWs.