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Cu2O/Ag co-deposited TiO2 nanotube array film prepared by pulse-reversing voltage and photocatalytic properties

机译:脉冲反转电压和光催化性能制备Cu2O / Ag共沉积TiO2纳米管阵列膜

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In this experiment, Cu2O/Ag co-deposition TiO2 nanotube array (Cu2O-Ag-TNT) film was prepared on pure Ti substrate with the method of combining anodic oxidation and electrodeposition by pulse-reversing voltage power supply in the electrolyte of NH4F, ethylene glycol, CuNO3 center dot 3H(2)O and AgNO3. The morphology, phase, chemical composition, photocatalytic property and mechanism of the nanotube array film were studied by means of scanning electron microscopy, energy dispersive x-ray spectroscopy, x-ray diffraction, x-ray photoelectron spectroscopy, transmission electron microscopy, UV-vis diffuse reflectance spectra, photoluminescence and photocatalytic degradation under visible light. The results showed that the depositional Cu2O and Ag existed in two forms, being the small-particle dispersion and large-particle sedimentary phase in the nanotube arrays: Cu2O-Ag-TNTs for different doping amounts of Ag could be prepared by adjusting the concentration of AgNO3 and the reverse voltages; with changing of the doping amount of Ag, the band gap and photo-generated electron-hole pair recombination rate also changed, and under the conditions of annealing and the optimized process parameter, the band gap of the nanotube arrays narrowed 0.49 eV and the rate of electron and pair recombination decreased noticeably; the nanotube array film for the concentration of 0.5 cm(2) ml(-1) degraded the methylene blue of 8 mg L-1, and the degradation rate reached above 98%. The co-deposition Cu2O-Ag-TNT film prepared by the one-step method performed well in the field of photocatalysis under visible light.
机译:本实验采用脉冲反转电压电源在NH4F,乙烯电解液中采用阳极氧化与电沉积相结合的方法,在纯Ti衬底上制备了Cu2O / Ag共沉积TiO2纳米管阵列(Cu2O-Ag-TNT)薄膜。乙二醇,CuNO3中心点3H(2)O和AgNO3。通过扫描电子显微镜,能量色散X射线能谱,X射线衍射,X射线光电子能谱,透射电子显微镜,UV-UV等手段研究了纳米管阵列膜的形貌,相,化学组成,光催化性能和机理。可见光下的漫反射光谱,光致发光和光催化降解。结果表明,在纳米管阵列中,沉积的Cu2O和Ag以小颗粒分散相和大颗粒沉积相两种形式存在:通过调节Ag的浓度可以制备不同掺杂量的Cu2O-Ag-TNTs。 AgNO3和反向电压;随着Ag掺杂量的变化,带隙和光生电子-空穴对的复合率也发生变化,并且在退火和优化工艺参数的条件下,纳米管阵列的带隙缩小了0.49eV,且电子和对的重组显着降低;浓度为0.5 cm(2)ml(-1)的纳米管阵列膜降解了8 mg L-1的亚甲基蓝,降解率达到98%以上。通过一步法制备的共沉积Cu2O-Ag-TNT薄膜在可见光下的光催化领域表现良好。

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