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Field electron emission enhancement of graphenated MWCNTs emitters following their decoration with Au nanoparticles by a pulsed laser ablation process

机译:石墨化的MWCNTs发射极在用Au纳米粒子修饰后通过脉冲激光烧蚀过程进行场电子发射增强

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A plasma-enhanced chemical vapor deposition (PECVD) process was adapted to alter the growth of multiwall carbon nanotubes (MWCNTs) so that graphene sheets grow out of their tips. Gold nanoparticle (Au-NP) decoration of graphenated MWCNTs (g-MWCNTs) was obtained by subsequent decoration by a pulsed laser deposition (PLD) process. By varying the number of laser ablation pulses (NLp) in the PLD process, we were able to control the size of the gold nanoparticles and the surface coverage of the decorated g-MWCNTs. The presence of Au-NPs, preferentially located at the tip of the g-MWCNTs emitters, is shown to significantly improve the field electron emission (FEE) properties of the global g-MWCNT/Au-NP nanohybrid films. Indeed, the electric field needed to extract a current density of 0.1 mu A cm(-2) from the g-MWCNT/ Au-NP films was decreased from 2.68 V mu m(-1) to a value as low as 0.96 V mu m(-1). On the other hand, UV photoelectron spectroscopy (UPS) characterization revealed a decrease in the global work function of the Au-decorated g-MWCNT nanohybrids compared to that of bare gMWCNT emitters. Surprisingly, the work function of g-MWCNT was found to decrease from 4.9 to 4.7 eV with the addition of Au-NPs-a value lower than the work function of both materials worth 5.2 and 4.9 eV for gold and g-MWCNT, respectively. Our results show that the NLp dependence of the FEE characteristics of the g-MWCNT/Au-NP emitters correlates well with their work function changes. Fowler-Nordheim-theory-based calculations suggest that the significant FEE enhancement of the emitters is also caused by the Au-NPs acting as nanoscale electric field enhancers.
机译:等离子体增强化学气相沉积(PECVD)工艺适用于改变多壁碳纳米管(MWCNT)的生长,从而使石墨烯片从其尖端生长出来。石墨化的碳纳米管(g-MWCNT)的金纳米颗粒(Au-NP)装饰是通过随后的脉冲激光沉积(PLD)工艺进行装饰而获得的。通过在PLD工艺中改变激光烧蚀脉冲(NLp)的数量,我们能够控制金纳米颗粒的大小和装饰的g-MWCNT的表面覆盖率。已显示优先位于g-MWCNTs发射器尖端的Au-NPs的存在可显着改善整体g-MWCNT / Au-NP纳米杂化膜的场电子发射(FEE)特性。实际上,从g-MWCNT / Au-NP膜中提取0.1μA cm(-2)的电流密度所需的电场从2.68 Vμm(-1)降低到低至0.96 V mu m(-1)。另一方面,紫外光电子能谱(UPS)表征显示,与裸gMWCNT发射器相比,Au装饰的g-MWCNT纳米杂化物的整体功函数降低。出乎意料的是,发现添加金纳米颗粒后,g-MWCNT的功函数从4.9 eV降低到4.7 eV-该值低于金和g-MWCNT的两种材料的功函数分别为5.2 eV和4.9 eV。我们的结果表明,g-MWCNT / Au-NP发射极的FEE特性的NLp依赖性与它们的功函数变化密切相关。基于Fowler-Nordheim理论的计算表明,发射极的显着FEE增强也是由充当纳米级电场增强剂的Au-NPs引起的。

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