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Surface-controlled contact printing for nanowire device fabrication on a large scale

机译:用于大规模制造纳米线器件的表面控制接触印刷

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摘要

Assembly strategies for functional nanowire devices that merge bottom-up and top-down technologies have been debated for over a decade. Although several breakthroughs have been reported, nanowire device fabrication techniques remain generally incompatible with large-scale and high-yield top-down microelectronics manufacturing. Strategies enabling the controlled transfer of nanowires from the growth substrate to pre-defined locations on a target surface would help to address this challenge. Based on the promising concept of mechanical nanowire transfer, we developed the technique of surface-controlled contact printing, which is based purely on dry friction between a nanowire and a target surface. Surface features, so-called catchers, alter the local frictional force or deposition probability and allow the positioning of single nanowires. Surface-controlled contact printing extends the current scope of nanowire alignment strategies with the intention to facilitate efficient nanowire device fabrication. This is demonstrated by the simultaneous assembly of 36 nanowire resistors within a chip area of greater than 2 cm(2) aided only by mask-assisted photolithography.
机译:融合自下而上和自上而下的技术的功能纳米线器件的组装策略已有十多年的历史了。尽管已经报道了一些突破,但是纳米线器件制造技术通常仍然与大规模,高产量的自上而下的微电子制造不兼容。使纳米线从生长基质到目标表面上预定位置的受控转移的策略将有助于解决这一挑战。基于有希望的机械纳米线转移概念,我们开发了表面控制的接触印刷技术,该技术完全基于纳米线与目标表面之间的干摩擦。表面特征,即所谓的捕捉器,会改变局部摩擦力或沉积几率,并允许放置单个纳米线。表面控制的接触印刷扩展了纳米线排列策略的当前范围,旨在促进有效的纳米线器件制造。这可以通过在大于2 cm(2)的芯片区域内同时组装36个纳米线电阻器来证明,这仅借助掩模辅助光刻即可。

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