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Characterization of the size and position of electron-hole puddles at a graphene p-n junction

机译:石墨烯p-n结处电子空穴池的大小和位置的表征

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摘要

The effect of an electron-hole puddle on the electrical transport when governed by snake states in a bipolar graphene structure is investigated. Using numerical simulations we show that information on the size and position of the electron-hole puddle can be obtained using the dependence of the conductance on magnetic field and electron density of the gated region. The presence of the scatterer disrupts snake state transport which alters the conduction pattern. We obtain a simple analytical formula that connects the position of the electron-hole puddle with features observed in the conductance. The size of the electron-hole puddle is estimated from the magnetic field and gate potential that maximizes the effect of the puddle on the electrical transport.
机译:研究了在双极石墨烯结构中受蛇形态控制时电子空穴水坑对电传输的影响。使用数值模拟,我们表明,可以使用电导率对选通区域的磁场和电子密度的依赖性来获得有关电子空穴坑的大小和位置的信息。散射体的存在会破坏蛇形传输,从而改变传导模式。我们获得了一个简单的解析公式,该公式将电子空穴水坑的位置与电导中观察到的特征联系起来。电子-空穴熔池的大小是根据磁场和栅极电势估算的,该磁场和栅极电势可最大化熔池对电传输的影响。

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