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Vertical SnSe nanorod arrays: from controlled synthesis and growth mechanism to thermistor and photoresistor

机译:垂直SnSe纳米棒阵列:从受控的合成和生长机理到热敏电阻和光敏电阻

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摘要

We demonstrate that high-quality vertically aligned SnSe nanorod (NR) arrays have been synthesized via a facile chemical vapor deposition method on SiO_2 substrates using Bi powder as catalysts. Both SEM and TEM measurements reveal that this kind of SnSe NR consists of a one-dimensional core and dense two-dimensional branches. Thermistors and photoresistors have been fabricated in situ by directly depositing silver paint on the growth substrates. The thermistor shows the great merits of a broad temperature range (77–390 K), linear input–output characteristic, suitable thermal index and high sensitivity. The photoresistor device exhibits relatively fast response time, linear input–output, high reversibility and stability. In addition, both of the devices have the advantages of low cost, environment-friendliness and easy fabrication. The high performance of SnSe thermistors and photodetectors will make SnSe material promising in industrial multifunction nanodevices.
机译:我们证明了高质量的垂直排列的SnSe纳米棒(NR)阵列已经通过使用Bi粉作为催化剂在SiO_2衬底上通过简便的化学气相沉积方法合成了。 SEM和TEM测量均表明这种SnSe NR由一维核和致密的二维分支组成。热敏电阻和光敏电阻是通过在生长基板上直接沉积银漆而原位制作的。热敏电阻具有宽温度范围(77–390 K),线性输入输出特性,合适的热指数和高灵敏度等优点。光敏电阻器件具有相对较快的响应时间,线性输入输出,高可逆性和稳定性。另外,这两种设备都具有成本低,环境友好和易于制造的优点。 SnSe热敏电阻和光电探测器的高性能将使SnSe材料在工业多功能纳米器件中大有前途。

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