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首页> 外文期刊>Nanotechnology >Direct-write three-dimensional nanofabrication of nanopyramids and nanocones on Si by nanotumefaction using a helium ion microscope
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Direct-write three-dimensional nanofabrication of nanopyramids and nanocones on Si by nanotumefaction using a helium ion microscope

机译:通过氦离子显微镜的纳米肿瘤形成法在硅上直接写入纳米金字塔和纳米锥的三维纳米加工

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The recently commercialized helium ion microscope (HIM) has already demonstrated its outstanding imaging capabilities in terms of resolution, surface sensitivity, depth of field and ease of charge compensation. Here, we show its exceptional patterning capabilities by fabricating dense lines and three-dimensional (3D) nanostructures on a Si substrate. Small focusing spot size and confined ion-Si interaction volume of a high-energy helium ion beam account for the high resolution in HIM patterning. We demonstrate that a set of resolvable parallel lines with a half pitch as small as 3.5 nm can be achieved. During helium ion bombardment of the Si surface, implantation outperforms milling due to the small mass of the helium ions, which produces tumefaction instead of depression in the Si surface. The Si surface tumefaction is the result of different kinetic processes including diffusion, coalescence and nanobubble formation of the implanted ions, and is found to be very stable structurally at room temperature. Under appropriate conditions, a linear dependence of the surface swollen height on the ion doses can be observed. This relation has enabled us to fabricate nanopyramids and nanocones, thus demonstrating that HIM patterning provides a new 'bottom-up' approach to fabricate 3D nanostructures. This surface tumefaction method is direct, both positioning and height accurate, and free of resist, etch, mode and precursor, and it promises new applications in nanoimprint mold fabrication and photomask clear defect reparation.
机译:最近商业化的氦离子显微镜(HIM)已经在分辨率,表面灵敏度,景深和电荷补偿的简便性方面展示了其出色的成像能力。在这里,我们通过在Si基板上制造密集线和三维(3D)纳米结构来显示其出色的图案形成能力。高能量氦离子束的小聚焦点尺寸和有限的离子-Si相互作用体积说明了HIM图案的高分辨率。我们证明可以实现一组半间距小至3.5 nm的可分辨平行线。在氦离子轰击硅表面的过程中,由于氦离子的质量小,注入的效果优于铣削,这会引起肿瘤扩散,而不是在硅表面产生凹陷。 Si表面的扩散是注入的离子的扩散,聚结和纳米气泡形成等不同动力学过程的结果,发现在室温下其结构非常稳定。在适当的条件下,可以观察到表面溶胀高度对离子剂量的线性依赖性。这种关系使我们能够制造纳米金字塔和纳米锥,因此证明了HIM图案化为制造3D纳米结构提供了一种新的“自下而上”的方法。这种表面扩散法是直接的,定位和高度都精确,并且没有抗蚀剂,蚀刻剂,图案和前驱物,它有望在纳米压印模具制造和光掩模透明缺陷修复方面获得新的应用。

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