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Batch fabrication of gold-gold nanogaps by E-beam lithography and electrochemical deposition

机译:电子束光刻和电化学沉积批量制备金-金纳米间隙

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摘要

We report on the successful development of a well-controlled two-step batch nano-fabrication process to achieve nanometer-size gaps at the wafer scale. The technique is based on an optimized electron-beam lithography process, which enables the fabrication of nanogaps in the range (15 ± 4) nm. Following this first step, the feedback-controlled electrochemical deposition of gold from an aqueous HAuCl_4-based electrolyte is applied to further reduce the size of the gap down to about 0.3-1.0 nm. This protocol was successfully demonstrated by fabricating more than 385 nanogaps on a 4 inch wafer. The reproducible fabrication of nanogaps in the range between 0.3 and 1.0 nm opens up new perspectives for addressing the electrical and reactivity properties of single molecules and clusters in confined space under well-controlled conditions.
机译:我们报告成功开发了一种可控的两步分批纳米加工工艺,该工艺可在晶圆级实现纳米级的间隙。该技术基于优化的电子束光刻工艺,可以制造(15±4)nm范围内的纳米间隙。在该第一步之后,从基于HAuCl_4的水性电解质中进行金的反馈控制电化学沉积,以进一步将间隙尺寸减小至约0.3-1.0 nm。通过在4英寸晶圆上制造385个以上的纳米间隙,成功地证明了该协议。在0.3至1.0 nm范围内可重复制造的纳米缝隙,为在受控条件下解决狭窄空间中单个分子和簇的电学和反应性问题开辟了新的前景。

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