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Wafer-scale fabrication of nanoapertures using corner lithography

机译:使用角平版印刷技术进行纳米孔径的晶圆级制造

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摘要

Several submicron probe technologies require the use of apertures to serve as electrical, optical or fluidic probes; for example, writing precisely using an atomic force microscope or near-field sensing of light reflecting from a biological surface. Controlling the size of such apertures below 100 nm is a challenge in fabrication. One way to accomplish this scale is to use high resolution tools such as deep UV or e-beam. However, these tools are wafer-scale and expensive, or only provide series fabrication. For this reason, in this study a versatile method adapted from conventional micromachining is investigated to fabricate protruding apertures on wafer-scale. This approach is called corner lithography and offers control of the size of the aperture with diameter less than 50 nm using a low-budget lithography tool. For example, by tuning the process parameters, an estimated mean size of 44.5 nm and an estimated standard deviation of 2.3 nm are found. The technique is demonstrated - based on a theoretical foundation including a statistical analysis - with the nanofabrication of apertures at the apexes of micromachined pyramids. Besides apertures, the technique enables the construction of wires, slits and dots into versatile three-dimensional structures.
机译:几种亚微米探针技术要求使用孔来充当电,光学或流体探针。例如,使用原子力显微镜精确书写或对从生物表面反射的光进行近场感应。将这样的孔的尺寸控制在100nm以下是制造中的挑战。实现此规模的一种方法是使用高分辨率工具,例如深紫外线或电子束。但是,这些工具是晶圆级且昂贵的,或者仅提供批量制造。由于这个原因,在这项研究中,研究了一种适用于传统微加工的通用方法来制造晶圆级的凸出孔。这种方法称为转角光刻,可使用低成本的光刻工具控制直径小于50 nm的孔径的大小。例如,通过调整工艺参数,发现估计的平均尺寸为44.5 nm,估计的标准偏差为2.3 nm。在包括统计分析在内的理论基础的基础上,对微加工金字塔的顶端进行了纳米加工,从而证明了该技术。除开孔外,该技术还可以将电线,狭缝和点构造成通用的三维结构。

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