Ultrahigh sensitivity and gain white light photodetector based on GaTe/Sn:CdS nanoflakeanowire heterostructures

摘要

Optoelectronic diode based on PN heterostructure is one of the most fundamental device building blocks with extensive applications. Here we reported the fabrication and optoelectronic properties of GaTe/Sn: CdS nanoflakeanowire PN heterojunction photodetectors. With high quality contacts between metal electrodes and Sn: CdS or GaTe, the electrical measurement of GaTe/Sn: CdS hybrid heterojunction under dark condition demonstrates an excellent diode characteristic with well-defined current rectification behavior. The photocurrent increases drastically under LED white light as well as red, green, UV illumination. The on-off ratio of current is about 100 for forward bias and 3000 for reverse bias, which clearly indicates the ultrahigh sensitivity of the heterostructure photodetector to white light. The responsivity and optical gain are determined to be 607 AW~(?1) and (1.06–2.16) × 10~5%, which is higher than previous reports of single GaTe or CdS nanostructures. Combination the I_(ds)–V_(ds) curves under different illumination power with energy band diagrams, we assign that both the light modulation effect under forward and reverse bias and the surface molecular oxygen adsorption/ desorption mechanism are dominant to the electrical transport behavior of GaTe/Sn: CdS heterojunction. This heterostructure photodetector also shows good stability and fast response speed. Both the high photosensibility and fast response time described in the present study suggest strongly that the GaTe/Sn: CdS hybrid heterostructure is a promising candidate for photodetection, optical sensing and switching devices.