Intrinsic Ge nanowire nonvolatile memory based on a simple core–shell structure

摘要

Intrinsic Ge nanowires (NWs) with a Ge core covered by a thick Ge oxide shell are utilized to achieve nanoscale fieldeffect transistor nonvolatile memories, which show a large memory window and a high ON/OFF ratio with good retention. The retainable surface charge trapping is considered to be responsible for the memory effect, and the Ge oxide shell plays a key role as the insulating tunneling dielectric which must be thick enough to prevent stored surface charges from leaking out. Annealing the device in air is demonstrated to be a simple and effective way to attain thick Ge oxide on the Ge NW surface, and the Ge-NW-based memory corresponding to thick Ge oxide exhibits a much better retention capability compared with the case of thin Ge oxide.