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Work function engineering of ZnO electrodes by using p-type and n-type doped carbon nanotubes

机译:使用p型和n型掺杂碳纳米管的ZnO电极的功函数工程

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摘要

Transparent electrodes in organic electronic devices are strongly needed in order to replace indium tin oxide (ITO). Some of the best candidates are ZnO films, which have shown both good electronic properties and solution processability compatible with roll-to-roll production of the devices. We present the possibility to engineer the work function of ZnO by blending it with carbon nanotubes (CNTs). B-doped (p-type), N-doped (n-type) and undoped CNTs as well as their blends with ZnO have been characterized by atomic force microscopy (AFM), scanning Kelvin probe microscopy (SKPM) and Raman spectroscopy. The results of Raman spectroscopy demonstrate the substitutional doping of carbon nanotubes, which preserves their covalent structure although increasing the disorder within the nanotubes. The roughness and average shape of grains of ZnO when blended with the doped nanotubes have been measured by AFM. Finally, SKPM shows that the work function of the blends can be engineered from 4.4 ± 0.1 to 4.9 ± 0.1 eV according to the kind of nanotube that is blended even if only a small amount of nanotubes is added to the blend (0.08 wt%).
机译:为了代替铟锡氧化物(ITO),强烈需要有机电子设备中的透明电极。 ZnO薄膜是一些最佳的选择,它具有良好的电子性能和溶液可加工性,可与设备的卷对卷生产兼容。我们提出了通过将ZnO与碳纳米管(CNT)混合来设计其功函数的可能性。 B掺杂(p型),N掺杂(n型)和非掺杂CNT及其与ZnO的混合物已经通过原子力显微镜(AFM),扫描开尔文探针显微镜(SKPM)和拉曼光谱进行了表征。拉曼光谱法的结果表明碳纳米管的取代掺杂,尽管增加了纳米管内的无序性,但保留了它们的共价结构。 ZnO与掺杂的纳米管混合时,晶粒的粗糙度和平均形状已通过AFM测量。最后,SKPM表明,即使仅向混合物中添加少量纳米管(0.08 wt%),也可以根据混合的纳米管的种类将混合物的功函数设计为4.4±0.1至4.9±0.1 eV。 。

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