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Observation of localized strains on vertically grown singlewalled carbon nanotube forests via polarized Raman spectroscopy

机译:偏振拉曼光谱法观察垂直生长的单壁碳纳米管森林上的局部应变

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摘要

Vertically grown single-walled carbon nanotube (V-SWCNT) forests, synthesized by water-assisted plasma-enhanced chemical vapor deposition, were studied using polarized micro-Raman spectroscopy. Among three different sections (root, center and end) along the vertical growth direction, the degree of V-SWCNT alignment was highest in the center section. Raman frequency red-shifts up to 7 and 13 cm~(-1), for RBM and G-band, respectively, were observed in the center section, with respect to the Raman frequencies measured in the root and the end sections. Raman frequency downshift and concurrent linewidth broadening of the G-band, revealing a localized strain, were also observed in the center section. The existence of a localized strain in the center section of the V-SWCNT was further confirmed by observing a strong polarization anisotropy of up to 8 cm~(-1) in the G-band Raman frequency for different polarized Raman scattering configurations at the same probed spot.
机译:利用偏振微拉曼光谱研究了通过水辅助等离子体增强化学气相沉积法合成的垂直生长的单壁碳纳米管(V-SWCNT)森林。在沿垂直生长方向的三个不同部分(根,中心和末端)中,V-SWCNT的排列程度在中心部分最高。相对于在根部和端部测得的拉曼频率,在中心部分观察到RBM和G波段的拉曼频率红移分别达到7和13 cm〜(-1)。在中心区域也观察到拉曼频率下移和同时发生的G波段线宽展宽,显示出局部应变。通过观察在相同的不同偏振拉曼散射配置下,G波段拉曼频率中高达8 cm〜(-1)的强偏振各向异性,进一步证实了V-SWCNT中心部分存在局部应变。探测点。

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