...
首页> 外文期刊>Nanotechnology >Direct-write 3D nanolithography at cryogenic temperatures
【24h】

Direct-write 3D nanolithography at cryogenic temperatures

机译:低温下的直接写入3D纳米光刻

获取原文
获取原文并翻译 | 示例
           

摘要

Direct-write three-dimensional nanolithography is demonstrated using cryogenic electron beam-induced deposition (EBID). Cryogenic cooling and an electron beam were used to condense and expose the precursor methylcyclopentadienyl(trimethyl)platinum (MeCpPtMe_3). The exposure process was modeled by Monte Carlo simulations of electron-condensate interactions, which were used to develop two approaches for the fabrication of three-dimensional self-supporting structures with incorporated gaps. Vertical and lateral resolutions of approximately 150 and 22 nm are demonstrated, and underlying mechanisms that limit resolution and throughput are identified. Resolution can be traded off for condensate exposure efficiency, which is shown to be up to four orders of magnitude greater than that of conventional, room temperature EBID.
机译:使用低温电子束诱导沉积(EBID)演示了直接写入三维纳米光刻。使用低温冷却和电子束冷凝并暴露前驱体甲基环戊二烯基(三甲基)铂(MeCpPtMe_3)。通过电子-冷凝物相互作用的蒙特卡洛模拟对曝光过程进行建模,该模拟用于开发两种方法来制造带有结合间隙的三维自支撑结构。展示了大约150 nm和22 nm的垂直和横向分辨率,并确定了限制分辨率和吞吐量的潜在机制。可以权衡分辨率以得到冷凝水暴露效率,该效率比传统的室温EBID高出四个数量级。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号