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ZnO nanowire co-growth on SiO _2 and C by carbothermal reduction and vapour advection

机译:碳热还原和气相对流在ZnO_2和C上共生长ZnO纳米线

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摘要

Vertically aligned ZnO nanowires (NWs) were grown on Au-nanocluster-seeded amorphous SiO _2 films by the advective transport and deposition of Zn vapours obtained from the carbothermal reaction of graphite and ZnO powders. Both the NW volume and visible-to-UV photoluminescence ratio were found to be strong functions of, and hence could be tailored by, the (ZnO+C) sourceSiO _2 substrate distance. We observe C flakes on the ZnO NWs/SiO _2 substrates which exhibit short NWs that developed on both sides. The SiO _2 and C substrates/NW interfaces were studied in detail to determine growth mechanisms. NWs on Au-seeded SiO _2 were promoted by a rough ZnO seed layer whose formation was catalysed by the Au clusters. In contrast, NWs grew without any seed on C. A correlation comprising three orders of magnitude between the visible-to-UV photoluminescence intensity ratio and the NW volume is found, which results from a characteristic Zn partial pressure profile that fixes both O deficiency defect concentration and growth rate.
机译:垂直排列的ZnO纳米线(NWs)通过对流传输和沉积从石墨和ZnO粉末的碳热反应获得的Zn蒸气,在金纳米簇接种的非晶SiO _2薄膜上生长。发现NW体积和可见光到UV的光致发光比率都是(ZnO + C)源SiO _2衬底距离的强函数,因此可以对其进行调整。我们在ZnO NWs / SiO _2基板上观察到C薄片,这些薄片显示出在两侧都形成的短NW。详细研究了SiO _2和C衬底/ NW界面以确定生长机理。粗糙的ZnO种子层促进了Au播种的SiO _2上的NW,该种子层的形成受到Au簇的催化。相反,NW在C上没有任何种子地生长。发现了可见光到UV光致发光强度比与NW体积之间的三个数量级的相关性,这是由固定两个O缺陷缺陷的特征性Zn分压曲线导致的。浓度和增长率。

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